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| Preliminary Data Sheet HiPerFASTTM IGBT with Diode Combi Pack IXGH32N50BU1 IXGH32N50BU1S VCES IC25 VCE(sat) tfi TO-247 SMD (32N50BU1S) = = = = 500 V 60 A 2.0 V 80 ns Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, T VJ = 125C, RG = 33 Clamped inductive load, L = 100 H TC = 25C Maximum Ratings 500 500 20 30 60 32 120 ICM = 64 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 300 1.13/10 TO-247 SMD TO-247 AD 4 6 V V V V A A A A W C C C C Nm/lb.in. g g Features l G E C (TAB) TO-247 AD C (TAB) G C E C = Collector, TAB = Collector G = Gate, E = Emitter, Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque, TO-247 AD l l l l International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD High frequency IGBT and antiparallel FRED in one package High current handling capability Newest generation HDMOSTM process MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 2.5 TJ = 25C TJ = 125C 5.5 500 8 100 2.0 V V A mA nA V l l l l l BVCES VGE(th) ICES I GES VCE(sat) IC IC = 750A, VGE = 0 V = 250 A, VCE = VGE AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V Advantages l l l Space savings (two devices in one package) High power density Very fast switching speeds for high frequency applications (c) 1997 IXYS All rights reserved 95565A (4/97) IXGH32N50BU1 IXGH32N50BU1S Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 15 20 2500 VCE = 25 V, VGE = 0 V, f = 1 MHz 270 70 125 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 H, VCE = 0.8 V CES, RG = Roff = 4.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * V CES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 H VCE = 0.8 VCES, RG = Roff = 4.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 23 50 25 30 100 80 0.7 25 35 1 120 120 1.2 200 150 1.5 150 35 75 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.62 K/W K/W e P TO-247 AD Outline gfs Cies Coes Cres Qg Q ge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK I C = I C90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-247 SMD Outline 0.25 Reverse Diode (FRED) Symbol VF I RM trr RthJC Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.6 15 50 V A ns ns 1. Gate 2. Collector 3. Emitter 4. Collector IF = IC90 , VGE = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IC90, VGE = 0 V, -diF /dt = 240 A/s 10 VR = 360 V TJ =125C 150 35 IF = 1 A; -di/dt = 100 A/s; VR = 30 V TJ =25C 1 K/W Min. Recommended Footprint (Dimensions in inches and (mm)) Dim. A A1 A2 b b1 C D E e L L1 L2 L3 L4 OP Q R S Millimeter Min. Max. 4.83 2.29 1.91 1.14 1.91 0.61 20.80 15.75 5.45 4.90 2.70 2.10 0.00 1.90 3.55 5.59 4.32 6.15 5.21 2.54 2.16 1.40 2.13 0.80 21.34 16.13 BSC 5.10 2.90 2.30 0.10 2.10 3.65 6.20 4.83 BSC Inches Min. Max. .190 .090 .075 .045 .075 .024 .819 .620 .215 .193 .106 .083 .00 .075 .140 .220 .170 .242 .205 .100 .085 .055 .084 .031 .840 .635 BSC .201 .114 .091 .004 .083 .144 .244 .190 BSC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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